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Электронный компонент: BC848

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SOT23 PNP SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ISSUE 6 - APRIL 1997
PARTMARKING DETAILS
COMPLEMENTARY TYPES
BC856A3A
BC858C3L
BC856
BC846
BC856BZ3B
BC859AZ4A
BC857
BC847
BC857AZ3E
BC859B4B
BC858
BC848
BC857B3F
BC859CZ4C
BC859
BC849
BC857C3G
BC860AZ4E
BC860
BC850
BC858A3J
BC860B4F
BC858B3K
BC860C4GZ
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BC856
BC857
BC858
BC859
BC860
UNIT
Collector-Base Voltage
V
CBO
-80
-50
-30
-30
-50
V
Collector-Emitter Voltage
V
CES
-80
-50
-30
-30
-50
V
Collector-Emitter Voltage
V
CEO
-65
-45
-30
-30
-45
V
Emitter-Base Voltage
V
EBO
-5
V
Continuous Collector Current
I
C
-100
mA
Peak Pulse Current
I
EM
-200
mA
Base Current
I
BM
-200
mA
Base Current
I
EM
-200
mA
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage
Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
BC856 BC857 BC858 BC859 BC860
UNIT CONDITIONS.
Collector Cut-Off Current I
CBO
Max
-15
nA V
CB
= -30V
Max
-4
A
V
CB
= -30V
Tamb=150C
Collector-Emitter
Saturation Voltage
V
CE(sat)
Typ
Max.
-75
-300
-75
-300
-75
-300
-75
-250
-75
-250
mV
I
C
=-10mA,
I
B
=-0.5mA
Typ
Max.
-250
-650
mV
I
C
=-100mA,
I
B
=-5mA
Typ
Max.
-300
-600
mV
I
C
=-10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
Typ
-700
mV
I
C
=-10mA,
I
B
=-0.5mA
Typ
-850
mV
I
C
=-100mA,
I
B
=-5mA
Base-Emitter Voltage
V
BE
Min
Typ
Max
-600
-650
-750
-600
-650
-750
-600
-650
-750
-580
-650
-750
-580
-650
-750
mV
I
C
=-2mA
V
CE
=-5V
Max
-820
mV
I
C
=-10mA
V
CE
=-5V
* Collector-Emitter Saturation Voltage at I
C
= 10mA for the characteristics going through the
operating point I
C
= 11mA, V
CE
= 1V at constant base current.
BC856 BC857
BC858 BC859
BC860
C
B
E
SOT23
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
BC856 BC857 BC858 BC859 BC860
UNIT CONDITIONS.
Noise Figure
N
Typ
Max
2
10
2
10
2
10
1
4
1
4
dB
dB
V
CB
= -5V,
I
C
=-200
A, R
G
=2k
,
f=1kHz,
f=200Hz
Typ
Max
1.2
4
1
3
dB
dB
V
CB
= -5V,
I
C
=-200
A, R
G
=2k
,
f=30Hz to 15kHz at
-3dB points
Equivalent Noise
Voltage
e
n
Max
110
110 nV
V
CB
= -5V,
I
C
=-200
A, R
G
=2k
,
f=10Hz to 50Hz at
-3dB points
Dynamic
Group
VI
Characteristics
Group A
Group B
Group C
h
ie
Min
Typ
Max
0.4
1.2
2.2
0.4
1.2
2.2
0.4
1.2
2.2
k
k
k
V
CE
=-5V
Ic=-2mA
f=1kHz
Min
Typ
Max
1.6
2.7
4.5
k
k
k
Min
Typ
Max
3.2
4.5
8.5
k
k
k
Min
Typ
Max
6
8.7
15
6
8.7
15
6
8.7
15
k
k
k
Group VI
Group A
Group B
Group C
h
re
Typ
Typ
Typ
Typ
2.5
1.5
2
2.5
1.5
2
2.5
1.5
2
3
1.5
2
3
1.5
2
3
x10
-4
x10
-4
x10
-4
x10
-4
Group VI
Group A
Group B
Group C
h
fe
Min
Typ
Max
75
110
150
75
110
150
75
110
150
Min
Typ
Max
125
220
260
Min
Typ
Max
240
330
500
Min
Typ
Max
450
600
900
450
600
900
450
600
900
450
600
900
Group VI
h
oe
Typ
Max
20
40
20
40
20
40
s
s
Group A
Typ
Max
18
30
s
s
Group B
Typ
Max
30
60
s
s
Group C
Typ
Max
60
110
60
110
60
110
s
s
BC856 BC857
BC858 BC859
BC860
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
BC856 BC857 BC858 BC859 BC860
UNIT CONDITIONS.
Static Group
VI
Forward
Current Ratio
h
FE
Min
Typ
Max
75
110
150
75
110
150
75
110
150
I
C
=-2mA,
V
CE
=-5V
Group A
h
FE
Typ
90
90
90
I
C
=-0.01mA,V
CE
=-5V
Min
Typ
Max
125
180
250
I
C
=-2mA,
V
CE
=-5V
Typ
120
120
120
I
C
=-100mA,V
CE
=-5V
Group B
h
FE
Typ
150
I
C
=-0.01mA,V
CE
=-5V
Min
Typ
Max
220
290
475
I
C
=-2mA,
V
CE
=-5V
Typ
200
200
200
I
C
=-100mA,V
CE
=-5V
Group C
h
FE
Typ.
270
270
270
270
I
C
=-0.01mA,
V
CE
=-5V
Min
Typ
Max
420
500
800
420
500
800
420
500
800
420
500
800
I
C
=-2mA,
V
CE
=-5V
Typ
400
I
C
=-100mA,V
CE
=-5V
Transition Frequency
f
T
Typ
150
150
150
300
300 MHz I
C
=-10mA,V
CE
=-5V
f=100MHz
Collector-Base
Capacitance
C
obo
Typ
4.5
pF
V
CB
=-10V,
f=1MHz
Spice parameter data is available upon request for these devices
BC856 BC857
BC858 BC859
BC860